REACTIVE ION ETCHING OF ALINGAP AND GAAS IN SICL4/CH4/AR-BASED PLASMAS

被引：2
|
作者：
CHANG, CVJM
RIJPERS, JCN
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reactive ion etching of AlInGaP and GaAs with a gas mixture of SiCl4, CH4, and Ar is examined. Process parameters such as gas flow composition and radio-frequency power input are varied. The CH4 flow variation in particular has a substantial effect on the morphology of AlInGaP, while generally the effects on GaAs are less dramatic. The etch rates of AlInGaP and GaAs show similar trends. A suitable etching process was found and applied to an AlInGaP/InGaP index-guided 675 nm laser structure.
引用
收藏
页码：536 / 539
页数：4
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