Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

被引：24

作者：

Chattopadhyay, Ritwik ^{[1
]}

Bhattacharya, Subhashish ^{[1
]}

Foureaux, Nicole C. ^{[1
]}

Pires, Igor A. ^{[1
]}

de Paula, Helder ^{[1
]}

Moraes, Lenin ^{[1
]}

Cortizio, Porfirio C. ^{[1
]}

Silva, Sidelmo M. ^{[1
]}

Cardoso Filho, Braz ^{[1
]}

Brito, Jose A. de S. ^{[1
]}

机构：

[1] North Carolina State Univ, FREEDM Syst Ctr, Dept ECE Raleigh, Raleigh, NC 27695 USA

来源：

IEEJ JOURNAL OF INDUSTRY APPLICATIONS | 2015年 / 4卷 / 06期

关键词：

medium voltage grid; PV plant; renewable energy source; SiC. dual active bridge (DAB);

D O I：

10.1541/ieejjia.4.767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V/100A SiC-MOSFETs, 1700V SiC-MOSFETs, 1700V SiC-Schottky diodes, 10 kV SiC-MOSFETs, and 10 kV JBS diodes have proved to be useful for high-voltage applications. High-voltage SiC devices enable high-switching frequency operation thus reducing the size of the parasitic element. This paper focuses on an alternative approach to the 0.9MW PV power plant currently being constructed in Brazil. The objective of the use of high power SiC devices for integration of the PV power plant into 13.8 kV grid is to provide higher efficiency and reduced size and volume.

引用

页码：767 / 775

页数：9

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