共 50 条
- [1] SiC devices for high voltage high power applications [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 963 - 968
- [2] An Update on High Voltage SiC Power Devices [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 39 - 41
- [3] SiC power devices for high voltage applications [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 330 - 338
- [4] Low Voltage PV Power Integration into Medium Voltage Grid Using High Voltage SiC Devices [J]. 2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014, : 3225 - 3232
- [5] Realization of High Speed Switching of SiC Power Devices in Voltage Source Converters [J]. WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 28 - 33
- [6] MV Power Conversion Systems Enabled by High-Voltage SiC Devices [J]. IEEE POWER ELECTRONICS MAGAZINE, 2019, 6 (04): : 18 - 21
- [7] Power devices for medium voltage PWM converters [J]. POWER ENGINEERING JOURNAL, 1999, 13 (06): : 297 - 307
- [8] High-voltage SiC and GaN power devices [J]. MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 112 - 122
- [9] Towards Very High Voltage SiC Power Devices [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 425 - 436
- [10] High-voltage SiC and GaN power devices [J]. PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 198 - 200