CHARACTERIZATION OF ION-IMPLANTED SI-MOLECULAR BEAM EPITAXY FILM

被引:0
|
作者
LIU, J
BELLAVANCE, D
机构
来源
关键词
D O I
10.1116/1.583778
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:742 / 742
页数:1
相关论文
共 50 条
  • [31] Nanomechanical properties of ion-implanted Si
    Nagy, P. M.
    Aranyi, D.
    Horvath, P.
    Peto, G.
    Kalman, E.
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (3-4) : 875 - 880
  • [32] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [33] EPR OF ION-IMPLANTED DONORS IN SI
    BROWER, KL
    BORDERS, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 267 - &
  • [34] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI
    GRUSKA, B
    GOTZ, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4): : 157 - 167
  • [35] A NEW ELECTRON-BEAM EVAPORATION SOURCE FOR SI-MOLECULAR BEAM EPITAXY CONTROLLED BY A QUADRUPOLE MASS-SPECTROMETER
    PETER, G
    KOLLER, A
    VAZQUEZ, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (06): : 3061 - 3063
  • [36] PHOTOACOUSTIC OPTICAL AND THERMAL CHARACTERIZATION OF SI AND GAAS ION-IMPLANTED LAYERS
    ZAMMIT, U
    MARINELLI, M
    SCUDIERI, F
    MARTELLUCCI, S
    APPLIED PHYSICS LETTERS, 1987, 50 (13) : 830 - 832
  • [37] ION-IMPLANTED CONTACTS TO A-SI-H THIN-FILM TRANSISTORS
    BARE, HF
    NEUDECK, GW
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 431 - 433
  • [38] Picosecond photoresponse of carriers in Si ion-implanted Si
    Chin, A
    Lee, KY
    Lin, BC
    Horng, S
    APPLIED PHYSICS LETTERS, 1996, 69 (05) : 653 - 655
  • [39] Passivation of poly-Si thin film transistors with ion-implanted deuterium
    Wang, AW
    Saraswat, KC
    FLAT-PANEL DISPLAY MATERIALS-1998, 1998, 508 : 85 - 90
  • [40] STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED GRAPHITE
    ELMAN, BS
    SHAYEGAN, M
    DRESSELHAUS, MS
    MAZUREK, H
    DRESSELHAUS, G
    PHYSICAL REVIEW B, 1982, 25 (06) : 4142 - 4156