CHARACTERIZATION OF ION-IMPLANTED SI-MOLECULAR BEAM EPITAXY FILM

被引:0
|
作者
LIU, J
BELLAVANCE, D
机构
来源
关键词
D O I
10.1116/1.583778
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:742 / 742
页数:1
相关论文
共 50 条
  • [21] A TECHNIQUE FOR RAPIDLY ALTERNATING BORON AND ARSENIC DOPING IN ION-IMPLANTED SILICON MOLECULAR-BEAM EPITAXY
    SWARTZ, RG
    MCFEE, JH
    VOSHCHENKOV, AM
    FINEGAN, SN
    OTA, Y
    APPLIED PHYSICS LETTERS, 1982, 40 (03) : 239 - 241
  • [22] ELECTRICAL-PROPERTIES OF GAAS OVERGROWN BY MOLECULAR-BEAM EPITAXY ON GALLIUM ION-IMPLANTED SUBSTRATES
    ISHIBASHI, T
    FISCHER, A
    WIECK, AD
    PLOOG, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5B): : L742 - L744
  • [23] ION-BEAM CHARACTERIZATION OF THE ION-IMPLANTED ARSENIC TAIL IN SILICON
    BECK, SE
    JACCODINE, RJ
    FILO, AJ
    STEVIE, FA
    IRWIN, RB
    KAHORA, PM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (01): : 29 - 32
  • [24] REVERSE TEMPERATURE-DEPENDENCE OF GE SURFACE SEGREGATION DURING SI-MOLECULAR BEAM EPITAXY
    NAKAGAWA, K
    MIYAO, M
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3058 - 3062
  • [25] 370-DEGREES-C CLEAN FOR SI-MOLECULAR BEAM EPITAXY USING A HF DIP
    EAGLESHAM, DJ
    HIGASHI, GS
    CERULLO, M
    APPLIED PHYSICS LETTERS, 1991, 59 (06) : 685 - 687
  • [26] PULSED E-BEAM APPARATUS AND ANNEALING OF ION-IMPLANTED SI
    ITOH, T
    TAMURA, H
    OHKUBO, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : C499 - C499
  • [27] CONTACTLESS CHARACTERIZATION OF THE SI+ ION-IMPLANTED SEMIINSULATING GAAS
    ITO, A
    USAMI, A
    WADA, T
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : 4088 - 4090
  • [28] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS
    KENNEDY, EF
    LAU, SS
    GOLECKI, I
    MAYER, JW
    TSENG, W
    MINNUCCI, JA
    KIRKPATRICK, AR
    RADIATION EFFECTS LETTERS, 1979, 43 (01): : 31 - 36
  • [29] Depth dependence of defects in ion-implanted Si probed by a positron beam
    Fujinami, M
    Miyagoe, T
    Sawada, T
    Suzuki, R
    Ohdaira, T
    Akahane, T
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 445-6 : 78 - 80
  • [30] Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy
    Zou, LF
    Wang, ZG
    Sun, DZ
    Fan, TW
    Liu, XF
    Zhang, JW
    APPLIED PHYSICS LETTERS, 1998, 72 (07) : 845 - 847