共 50 条
- [1] Thermal stability characterization of doped layers and heterostructures grown by Si-molecular beam epitaxy Sardela, Mauro R.Jr, 1600, JJAP, Minato-ku, Japan (33):
- [2] THERMAL-STABILITY CHARACTERIZATION OF DOPED LAYERS AND HETEROSTRUCTURES GROWN BY SI-MOLECULAR BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2381 - 2385
- [5] Growth, characterization and device fabrication of boron delta-doped structures by Si-molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2279 - 2281
- [7] Quantitative characterization of ion-implanted layers in Si PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE, 1999, 463 : 497 - 499
- [8] GROWTH, CHARACTERIZATION AND DEVICE FABRICATION OF BORON DELTA-DOPED STRUCTURES BY SI-MOLECULAR BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2279 - 2281
- [9] Wafer manipulator for Si-molecular beam epitaxy totally based on magnetic bearings IEEE Transactions on Magnetics, 1996, 32 (4 pt 1): : 2675 - 2678
- [10] X-RAY ABSORPTION OF AS LOW-ENERGY ION-IMPLANTED INTO SI(100) GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2020 - 2024