MEASUREMENTS ON THE DEMBER EFFECT IN THE RELAXATION SEMICONDUCTORS GAAS-O AND GAAS-CR

被引：2
|
作者：
BADICS, G
SZALMASSY, Z
机构：
[1] LUDWIG BOLTZMANN INST FESTKORPERPHYS,VIENNA,AUSTRIA
[2] UNIV VIENNA,INST FESTKORPERPHYS,A-1010 VIENNA,AUSTRIA
来源：
PHYSICS LETTERS A | 1979年 / 69卷 / 05期
关键词：
D O I：
10.1016/0375-9601(79)90434-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：364 / 366
页数：3
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