PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR

被引：107

作者：

LIN, AL ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.322905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1859 / 1867

页数：9

共 50 条

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