PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR

被引：107
|
作者：
LIN, AL [1 ]
BUBE, RH [1 ]
机构：
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期
关键词：
D O I：
10.1063/1.322905
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1859 / 1867
页数：9
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