PROPERTIES OF HIGH-RESISTIVITY CR-SI-O THIN-FILM RESISTOR

被引：0

作者：

NARIZUKA, Y ^{[1
]}

KAWAHITO, T ^{[1
]}

KAMEI, T ^{[1
]}

KOBAYASHI, S ^{[1
]}

机构：

[1] HITACHI LTD,KANAGAWA WORKS,KANAGAWA 25913,JAPAN

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1988年 / 11卷 / 04期

关键词：

Integrated Circuits; Hybrid--Components; -; Spectroscopy; Auger Electron - Spectroscopy; X-Ray; Sputtering;

D O I：

10.1109/TCHMT.1988.1134930

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several Cr-Si-O thin films with a high resistivity of 5-10 mΩ&middotcm were studied as candidates for high-resistance stable resistors. It is shown that the specific resistivity increases with the increase of oxygen content in the film, and that the high oxygen content in the film suppresses the formation of CrSi2 upon thermal treatment up to 673 K. The films are resistant to oxidation when thermally treated in an oxygen-containing environment and thus are suitable for high-temperature operation in air. The resistance of Cr-Si-O thin films may change with time during high-temperature operation due to the formation of the silicide, the annealing effect of the film, and the electromigration of the elements of the thin film materials.

引用

页码：433 / 438

页数：6

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