MEASUREMENTS ON THE DEMBER EFFECT IN THE RELAXATION SEMICONDUCTORS GAAS-O AND GAAS-CR

被引：2
|
作者：
BADICS, G
SZALMASSY, Z
机构：
[1] LUDWIG BOLTZMANN INST FESTKORPERPHYS,VIENNA,AUSTRIA
[2] UNIV VIENNA,INST FESTKORPERPHYS,A-1010 VIENNA,AUSTRIA
来源：
PHYSICS LETTERS A | 1979年 / 69卷 / 05期
关键词：
D O I：
10.1016/0375-9601(79)90434-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：364 / 366
页数：3
相关论文
共 50 条
  • [41] OBSERVATION OF A NEW CHROMIUM-RELATED COMPLEX IN GAAS-CR
    DEVEAUD, B
    LAMBERT, B
    PICOLI, G
    MARTINEZ, G
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4356 - 4360
  • [42] NEGATIVE PHOTOCONDUCTIVITY OF S-TYPE GAAS-CR DIODES
    PEKA, GP
    BRODOVOI, VA
    MIRETS, LZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 51 - 53
  • [43] OPTICAL QUENCHING OF INJECTION CURRENT AND INTRINSIC PHOTOCURRENT IN GAAS-CR
    BRODOVOI, VA
    PEKA, GP
    MIRETS, LZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1519 - 1522
  • [44] PHOTO-HALL EFFECT AND PHOTOCONDUCTIVITY IN P-TYPE EPITAXIAL GAAS-CR
    RIDLEY, BK
    ARIKAN, MC
    BISHOP, PJ
    HASSAN, MFM
    MACHADO, WV
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (33): : 6865 - 6879
  • [45] IMPURITY PHOTOCONDUCTIVITY OF GAAS-O IN STRONG ELECTRIC-FIELDS
    BRODOVOI, VA
    DERIKOT, NZ
    VAKULENKO, OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 620 - 623
  • [46] THE STUDY OF IMPURITY LEVELS IN LEC SEMIINSULATING GAAS-CR SAMPLES BY 2-SOURCE PHOTOCONDUCTIVITY MEASUREMENTS
    PASTRNAK, J
    KAREL, F
    OSWALD, J
    ULRICI, W
    KOLCHANOVA, NM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 99 (01): : 225 - 235
  • [47] REDISTRIBUTION OF CR IN GAAS-CR AND OF V IN GAAS-V AFTER IMPLANTATION OF SI, BE, OR B AND ANNEALING IN A CONTROLLED-ATMOSPHERE
    KUTT, W
    BIMBERG, D
    MAIER, M
    KRAUTLE, H
    KOHL, F
    TOMZIG, E
    APPLIED PHYSICS LETTERS, 1985, 46 (05) : 489 - 491
  • [48] ENERGY SPECTRUM OF DEEP LEVELS AND MECHANISM OF RADIATIVE RECOMBINATION IN GAAS-CR
    PEKA, GP
    KARKHANI.YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (02): : 261 - &
  • [49] ELECTRON-TRANSPORT BY LINE ACOUSTIC-WAVES IN GAAS-CR
    HOSKINS, M
    FLIEGEL, F
    MAHON, S
    DATTA, S
    HUNSINGER, BJ
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1981, 28 (05): : 376 - 376
  • [50] STRONG FRANCK-CONDON-SHIFT OF A DEEP CENTER IN GAAS-O
    MALINAUSKAS, RA
    PERVOVA, LY
    FISTUL, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1330 - 1331
12345