CURRENT-INDUCED BREAKDOWN IN PARA-TYPE COLLECTOR ALGAAS/GAAS HBTS

被引：5
|
作者：
GAO, GB [1 ]
HUANG, D [1 ]
CHYI, JI [1 ]
CHEN, J [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期
关键词：
D O I：
10.1109/16.47791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A phenomenon called “current-induced breakdown” that may occur in p-type collector heterojunction bipolar transistors is described. It is shown that the breakdown voltage across the p-type col-. © 1990 IEEE
引用
收藏
页码：807 / 810
页数：4
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