CURRENT-INDUCED BREAKDOWN IN PARA-TYPE COLLECTOR ALGAAS/GAAS HBTS

被引：5
|
作者：
GAO, GB [1 ]
HUANG, D [1 ]
CHYI, JI [1 ]
CHEN, J [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期
关键词：
D O I：
10.1109/16.47791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A phenomenon called “current-induced breakdown” that may occur in p-type collector heterojunction bipolar transistors is described. It is shown that the breakdown voltage across the p-type col-. © 1990 IEEE
引用
收藏
页码：807 / 810
页数：4
相关论文
共 50 条
  • [21] SUPPRESSION OF EMITTER SIZE EFFECT ON CURRENT GAIN IN ALGAAS/GAAS HBTS
    NAKAJIMA, O
    NAGATA, K
    ITO, H
    ISHIBASHI, T
    SUGETA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (10): : 1368 - 1369
  • [22] Long-term current instability of AlGaAs/GaAs HBTs: An overview
    Liou, JJ
    EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 1997, : 25 - 32
  • [23] ANALYSIS OF THE CURRENT-INDUCED BREAKDOWN OF SUPERCONDUCTIVITY
    BUCK, W
    PARISI, J
    JOURNAL OF LOW TEMPERATURE PHYSICS, 1990, 78 (5-6) : 297 - 314
  • [24] TRANSIT-TIME REDUCTION IN ALGAAS/GAAS HBTS UTILIZING VELOCITY OVERSHOOT IN THE P-TYPE COLLECTOR REGION
    MORIZUKA, K
    KATOH, R
    ASAKA, M
    IIZUKA, N
    TSUDA, K
    OBARA, M
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 585 - 587
  • [25] Current-induced breakdown of carbon nanofibers
    Suzuki, Makoto
    Ominami, Yusuke
    Ngo, Quoc
    Yang, Cary Y.
    Cassell, Alan M.
    Li, Jun
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [26] Base current instability of AlGaAs/GaAs HBTs operated at low voltages
    Liou, JJ
    Rezazadeh, AA
    1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1999, : 98 - 101
  • [27] CURRENT-INDUCED BREAKDOWN IN CONSTRICTED TYPE-I SUPERCONDUCTING FILMS
    CHIMENTI, DE
    WATSON, HL
    HUEBENER, RP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 416 - 416
  • [28] EVIDENCE OF TYPE-III INTERMITTENCY IN THE ELECTRIC BREAKDOWN OF PARA-TYPE GERMANIUM
    RICHTER, R
    PEINKE, J
    CLAUSS, W
    RAU, U
    PARISI, J
    EUROPHYSICS LETTERS, 1991, 14 (01): : 1 - 6
  • [29] Stress effect on current-induced degradation of be-doped AlGaAs/GaAs heterojunction bipolar transistors
    Mochizuki, Kazuhiro
    Isomae, Seiichi
    Masuda, Hiroshi
    Tanoue, Tomonori
    Kusano, Chuushiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (03): : 751 - 756
  • [30] ALGAAS/GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR
    MOCHIZUKI, K
    NAKAMURA, T
    TANOUE, T
    MASUDA, H
    HORIUCHI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2124 - 2125
12345