Analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer

被引：0
|
作者：
Liou, J.J. [1 ]
Ho, C.-S. [1 ]
Liou, L.L. [1 ]
Huang, C.I. [1 ]
机构：
[1] Univ of Central Florida, Orlando, United States
来源：
Solid-State Electronics | 1993年 / 36卷 / 06期
关键词：
Bipolar transistors;
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摘要：
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页码：819 / 825
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