Analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer

被引：0

作者：

Liou, J.J. ^{[1
]}

Ho, C.-S. ^{[1
]}

Liou, L.L. ^{[1
]}

Huang, C.I. ^{[1
]}

机构：

[1] Univ of Central Florida, Orlando, United States

来源：

Solid-State Electronics | 1993年 / 36卷 / 06期

关键词：

Bipolar transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：819 / 825

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