FLUORINATED THIN SIO2 GROWN BY RAPID THERMAL-PROCESSING

被引：8
|
作者：
TING, W
LO, GQ
HSIEH, TY
KWONG, DL
KUEHNE, J
MAGEE, CW
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
[2] EVANS & INC,PLAINSBORO,NJ 08536
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期
关键词：
D O I：
10.1063/1.103190
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality ultrathin fluorinated gate oxides have been grown for the first time by rapid thermal processing in diluted NF3 and O 2. The chemical and electrical properties of fluorinated oxides have been studied as a function of growth conditions.
引用
收藏
页码：2255 / 2257
页数：3
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