THIN SIO2-FILMS NITRIDED BY RAPID THERMAL-PROCESSING IN NH3 OR N2O FOR APPLICATIONS IN EEPROMS

被引：10
|
作者：
DUTOIT, M
BOUVET, D
MI, J
NOVKOVSKI, N
LETOURNEAU, P
机构：
[1] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90039-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin silicon dioxide (SiO2) films nitrided by rapid thermal processing (RTP) in ammonia and nitrous oxide are compared. Their electrical characteristics (oxide and interface trapped charge densities, resistance to high-field stress, breakdown charge) are correlated with the concentration of nitrogen at the Si/SiO2 interface. An optimum in several parameters is found for very light nitridations (0.5-1 at.% N). In this case, a significant improvement in the reliability of non-volatile memories (EEPROMs) is anticipated.
引用
收藏
页码：539 / 551
页数：13
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF THIN SIO2-FILMS NITRIDED IN N2O BY RAPID THERMAL-PROCESSING
    SEVERI, M
    MATTEI, G
    DORI, L
    MACCAGNANI, P
    BALDINI, GL
    PIZZOCHERO, G
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 657 - 660
  • [2] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
    FUKUDA, H
    ARAKAWA, T
    OHNO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2333 - L2336
  • [3] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
    FUKUDA, H
    ARAKAWA, T
    OHNO, S
    ELECTRONICS LETTERS, 1990, 26 (18) : 1505 - 1506
  • [4] THIN SIO2-FILMS NITRIDED IN N2O
    BELLAFIORE, N
    PIO, F
    RIVA, C
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 495 - 500
  • [5] ELECTRICAL-PROPERTIES OF THIN OXYNITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
    FUKUDA, H
    YASUDA, M
    OHNO, S
    ELECTRONICS LETTERS, 1991, 27 (05) : 440 - 441
  • [6] HIGH-RESOLUTION SIMS PROFILING OF NITROGEN IN ULTRA-THIN SIO2-FILMS NITRIDED BY RTP IN NH3 AND N2O
    MI, J
    BOUVET, D
    LETOURNEAU, P
    XANTHOPOULOS, N
    MATHIEU, HJ
    DUTOIT, M
    DUBOIS, C
    DUPUY, JC
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 81 - 84
  • [7] THE DIELECTRIC RELIABILITY OF VERY THIN SIO2-FILMS GROWN BY RAPID THERMAL-PROCESSING
    FUKUDA, H
    IWABUCHI, T
    OHNO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2164 - L2167
  • [8] NITRIDATION OF THIN SIO2-FILMS IN N2 AND NH3 PLASMAS
    FAZAN, P
    DUTOIT, M
    ILEGEMS, M
    APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 224 - 228
  • [9] THIN-GATE SIO2-FILMS FORMED BY INSITU MULTIPLE RAPID THERMAL-PROCESSING
    FUKUDA, H
    ARAKAWA, T
    OHNO, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) : 127 - 133
  • [10] HIGHLY RELIABLE ULTRA-THIN SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING
    FUKUDA, H
    ARAKAWA, T
    OHNO, S
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 451 - 454
12345