DIFFUSION OF GALLIUM VACANCIES FROM LOW-TEMPERATURE-GROWN GAAS

被引：9
|
作者：
OHBU, I
TAKAHAMA, M
IMAMURA, Y
机构：
[1] Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo, 185
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12A期
关键词：
MOLECULAR BEAM EPITAXY; LOW-TEMPERATURE-GROWN GAAS; ALGAAS; VACANCIES; DIFFUSION; ANNEALING;
D O I：
10.1143/JJAP.31.L1647
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600-degrees-C has been studied. Gallium vacancies diffuse from the LT-GaAs layer into an adjacent Si doped GaAs layer, degrading the electrical characteristics of the Si-doped GaAs. An AlxGa1-xAs (x > 0.3) barrier inserted between the LT-GaAs and the Si-doped GaAs effectively suppresses the diffusion of gallium vacancies from the LT-GaAs.
引用
收藏
页码：L1647 / L1649
页数：3
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