Impact of High-kappa Spacer on Junctionless Transistor in Sub-Threshold Regime

被引：1

作者：

Ghosh, Bahniman ^{[1
,2
]}

Mondal, Partha ^{[2
]}

Akram, M. W. ^{[2
]}

Bal, Punyasloka ^{[2
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

JOURNAL OF LOW POWER ELECTRONICS | 2014年 / 10卷 / 02期

关键词：

Junctionless Transistors (JLTs); Band-to-Band Tunneling (BTBT); High-kappa Spacers;

D O I：

10.1166/jolpe.2014.1312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the impact of high-kappa spacers on the off-state leakage current due to band-to-band tunneling (BTBT) in junctionless transistors (JLTs). In off-state, a significant band overlap between valence band of channel region and conduction band of drain region triggers the electrons to tunnel from valence band of channel region to conduction band of drain region and increases the off-state leakage current. Here we show that in off-state the vertical fringing electric field through the high-kappa spacer to the device layer increases tunneling distance along tunneling path of electron and reduces tunneling leakage currents.

引用

页码：293 / 296

页数：4

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