共 50 条
- [31] OPTICAL DETECTION OF BE ION-IMPLANTATION DAMAGE IN GAAS [J]. REPORT OF NRL PROGRESS, 1975, (MAR): : 21 - 24
- [32] Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 281 - 288
- [33] Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation [J]. Nucl Instrum Methods Phys Res Sect B, 1-4 (281):
- [34] SPECIFIC BEHAVIOR OF CDTE ION-IMPLANTATION DAMAGE [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3): : 123 - 127
- [35] DAMAGE ACCUMULATION IN CERAMICS DURING ION-IMPLANTATION [J]. JOURNAL OF METALS, 1985, 37 (08): : A34 - A34
- [37] ION-IMPLANTATION INTO STRAINED-LAYER SUPERLATTICES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 453 - 460
- [38] NATURE OF DISORDERED LAYER PRODUCED BY ION-IMPLANTATION [J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 901 - 905
- [39] ION-IMPLANTATION IS IN ITS ELEMENT. [J]. Machinery and Production Engineering, 1978, 132 (3398): : 22 - 23
- [40] OXIDATION OF AN INSB LAYER AFTER ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 197 (01): : 47 - 49