MATERIALS SCIENCE - IS THE FUTURE HERE FOR GALLIUM-ARSENIDE

被引：8
|
作者：
TRAVIS, J
机构：
来源：
SCIENCE | 1993年 / 262卷 / 5141期
关键词：
D O I：
10.1126/science.262.5141.1819
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
[No abstract available]
引用
收藏
页码：1819 / 1819
页数：1
相关论文
共 50 条
  • [31] DIFFUSION OF CHROMIUM IN GALLIUM-ARSENIDE
    DEAL, MD
    STEVENSON, DA
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2398 - 2407
  • [32] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE
    JAIN, GC
    SADANA, DK
    DAS, BK
    SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736
  • [33] RELIABILITY OF GALLIUM-ARSENIDE DEVICES
    MAURER, RH
    CHAO, KD
    BARGERON, CB
    BENSON, RC
    NHAN, E
    JOHNS HOPKINS APL TECHNICAL DIGEST, 1992, 13 (03): : 407 - 417
  • [34] MEV IMPLANTATION OF GALLIUM-ARSENIDE
    KANBER, H
    CHEN, JC
    BARGER, MJ
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 185 - 190
  • [35] GALLIUM-ARSENIDE ON SILICON - A REVIEW
    MORKOC, H
    UNLU, H
    ZABEL, H
    OTSUKA, N
    SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76
  • [36] BONDING OF GALLIUM-ARSENIDE CRYSTALS
    CHU, TL
    SMELTZER, RK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 846 - 846
  • [37] CHARACTERIZATION OF DEFECTS IN GALLIUM-ARSENIDE
    KUMAR, V
    MOHAPATRA, YN
    BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 83 - 88
  • [38] CARBON IMPLANTED INTO GALLIUM-ARSENIDE
    VANBERLO, WH
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2765 - 2769
  • [39] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
    REZNICHENKO, MF
    SALMAN, EG
    VERTOPRAKHOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
  • [40] MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
    ALEXANDER, H
    GOTTSCHALK, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 281 - 292
12345