DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON

被引：251

|

作者：

TANNENBAUM, E

机构：

来源：

SOLID-STATE ELECTRONICS | 1961年 / 2卷 / 2-3期

关键词：

D O I：

10.1016/0038-1101(61)90029-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：123 / 132

页数：10

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