DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON

被引：251
|
作者：
TANNENBAUM, E
机构：
来源：
SOLID-STATE ELECTRONICS | 1961年 / 2卷 / 2-3期
关键词：
D O I：
10.1016/0038-1101(61)90029-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：123 / 132
页数：10
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