FABRICATION METHODS FOR INGAASP/GAAS VISIBLE LASER STRUCTURE WITH ALGAAS BURYING LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：13

作者：

TAKAHASHI, NS

FUKUSHIMA, A

SASAKI, T

ISHIKAWA, J

NINOMIYA, K

NARUI, H

KURITA, S

机构：

[1] Keio Univ, Yokohama, Jpn, Keio Univ, Yokohama, Jpn

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.337034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：761 / 768

页数：8

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