FABRICATION METHODS FOR INGAASP/GAAS VISIBLE LASER STRUCTURE WITH ALGAAS BURYING LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：13
|
作者：
TAKAHASHI, NS
FUKUSHIMA, A
SASAKI, T
ISHIKAWA, J
NINOMIYA, K
NARUI, H
KURITA, S
机构：
[1] Keio Univ, Yokohama, Jpn, Keio Univ, Yokohama, Jpn
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期
关键词：
D O I：
10.1063/1.337034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
21
引用
收藏
页码：761 / 768
页数：8
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