共 50 条
- [21] DESIGN CONDISERATIONS ON EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR PHILIPS RESEARCH REPORTS, 1970, 25 (06): : 472 - +
- [22] Post-implantation annealing in a silane ambient using hot wall CVD Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 839 - 842
- [24] PECVD in-situ growth of silicon quantum dots in silicon nitride from silane and nitrogen MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 : 77 - 79
- [26] Low-temperature CVD of silicon dioxide by alkoxyl-silane-isocyanate JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1460 - 1463
- [27] SURFACE-CHEMISTRY AND SI CVD FROM SILANE ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 199 : 101 - COLL
- [30] Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes Electronic Materials Letters, 2016, 12 : 329 - 337