THE GROWTH OF SILICON FROM SILANE IN COLD WALL CVD SYSTEMS

被引：0
|
作者：
CLAASSEN, WAP
BLOEM, J
机构：
来源：
PHILIPS JOURNAL OF RESEARCH | 1981年 / 36卷 / 02期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：122 / 137
页数：16
相关论文
共 50 条
  • [41] 300mm Cold-Wall UHV/CVD Reactor For Low-Temperature Epitaxial (100) Silicon
    Adam, T. N.
    Bedell, S.
    Reznicek, A.
    Sadana, D. K.
    Venkateshan, A.
    Tsunoda, T.
    Seino, T.
    Nakatsuru, J.
    Shinde, S. R.
    SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 595 - 602
  • [42] Influence of silicon gas-to-particle conversion on SiC CVD in a cold-wall rotating-disc reactor
    Vorob'ev, A.N.
    Bogdanov, M.V.
    Komissarov, A.E.
    Karpov, S.Yu.
    Bord, O.V.
    Lovtsus, A.A.
    Makarov, Yu.N.
    Materials Science Forum, 2001, 353-356 : 107 - 110
  • [43] A multiscale model for CVD growth of silicon carbide
    Guan, Kang
    Zeng, Qingfeng
    Liu, Yongsheng
    Luan, Xin'gang
    Lu, Zhenya
    Wu, Jianqing
    COMPUTATIONAL MATERIALS SCIENCE, 2021, 196
  • [44] EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD
    MCNEILL, DW
    LIANG, Y
    MONTGOMERY, JH
    GAMBLE, HS
    ARMSTRONG, BM
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 779 - 786
  • [45] CVD growth of silicon films at high rates
    Hofstätter, M
    Atakan, B
    Kohse-Höinghaus, K
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 293 - 299
  • [46] Contribution to the modeling of CVD silicon carbide growth
    Raffy, C
    Blanquet, E
    Pons, M
    Bernard, C
    Melius, CF
    Allendorf, MD
    JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 205 - 212
  • [47] Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures
    Jagannathan, B
    Wallace, RL
    Anderson, WA
    Ahrenkeil, RN
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 675 - 678
  • [48] Toward fast growth of large area high quality graphene using a cold-wall CVD reactor
    Alnuaimi, Aaesha
    Almansouri, Ibraheem
    Saadat, Irfan
    Nayfeh, Ammar
    RSC ADVANCES, 2017, 7 (82) : 51951 - 51957
  • [49] Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
    Miseikis, V.
    Convertino, D.
    Mishra, N.
    Gemmi, M.
    Mashoff, T.
    Heun, S.
    Haghighian, N.
    Bisio, F.
    Canepa, M.
    Piazza, V.
    Coletti, C.
    2D MATERIALS, 2015, 2 (01):
  • [50] SILICON EPITAXIAL-GROWTH BY PLASMA DISSOCIATION OF SILANE
    ITOH, T
    SUZUKI, S
    TAKAI, H
    OKUDA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : C470 - C470
12345