HETEROJUNCTION BIPOLAR-TRANSISTOR USING PSEUDOMORPHIC GAINAS FOR THE BASE

被引：18
|
作者：
ENQUIST, PM
RAMBERG, LR
NAJJAR, FE
SCHAFF, WJ
EASTMAN, LF
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：179 / 180
页数：2
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