HETEROJUNCTION BIPOLAR-TRANSISTOR USING PSEUDOMORPHIC GAINAS FOR THE BASE

被引：18
|
作者：
ENQUIST, PM
RAMBERG, LR
NAJJAR, FE
SCHAFF, WJ
EASTMAN, LF
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：179 / 180
页数：2
相关论文
共 50 条
  • [11] EXTRACTION OF THE INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT
    SPIEGEL, SJ
    RITTER, D
    HAMM, RA
    FEYGENSON, A
    SMITH, PR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) : 1059 - 1064
  • [12] DOUBLE-HETEROJUNCTION GAALINAS/GAINAS BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY
    PELOUARD, JL
    HESTO, P
    PRASEUTH, JP
    GOLDSTEIN, L
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 516 - 518
  • [13] A NOVEL DOUBLE-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR FOR LOW-TEMPERATURE BIPOLAR LOGIC
    PRINZ, EJ
    XIAO, XD
    SCHWARTZ, PV
    STURM, JC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2636 - 2637
  • [14] HETEROJUNCTION BIPOLAR-TRANSISTOR DESIGN FOR POWER APPLICATIONS
    GAO, GB
    MORKOC, H
    CHANG, MCF
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 1987 - 1997
  • [15] 33-GHZ MONOLITHIC CASCODE ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR FEEDBACK-AMPLIFIER
    RODWELL, M
    JENSEN, JF
    STANCHINA, WE
    METZGER, RA
    RENSCH, DB
    PIERCE, MW
    KARGODORIAN, TV
    ALLEN, YK
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (10) : 1378 - 1382
  • [16] MODELING OF AN INVERSION BASE BIPOLAR-TRANSISTOR
    MEYYAPPAN, M
    GRUBIN, HL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 1 - 7
  • [17] QUANTUM-SWITCHED HETEROJUNCTION BIPOLAR-TRANSISTOR
    WU, MC
    TSANG, WT
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1771 - 1773
  • [18] GAAS GAASSB BASED HETEROJUNCTION BIPOLAR-TRANSISTOR
    KHAMSEHPOUR, B
    SINGER, KE
    [J]. ELECTRONICS LETTERS, 1990, 26 (14) : 965 - 967
  • [19] AN MBE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    MILLER, DL
    HARRIS, JS
    ASBECK, PM
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 579 - 580
  • [20] GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHEN, J
    WON, T
    UNLU, MS
    MORKOC, H
    VERRET, D
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 822 - 824
12345