EXTRACTION OF THE INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT

被引：65
|
作者：
SPIEGEL, SJ [1 ]
RITTER, D [1 ]
HAMM, RA [1 ]
FEYGENSON, A [1 ]
SMITH, PR [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/16.387237
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance, It is clearly indicated which elements are uniquely determined, and which elements are estimated.
引用
收藏
页码：1059 / 1064
页数：6
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