ELECTROLUMINESCENCE FROM THE BASE OF A GAAS/ALGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：11
|
作者：
LEVI, AFJ [1 ]
HAYES, JR [1 ]
GOSSARD, AC [1 ]
ENGLISH, JH [1 ]
机构：
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 02期
关键词：
D O I：
10.1063/1.97831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：98 / 100
页数：3
相关论文
共 50 条
  • [1] HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    ZANONI, E
    VENDRAME, L
    PAVAN, P
    MANFREDI, M
    BIGLIARDI, S
    MALIK, R
    CANALI, C
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (04) : 402 - 404
  • [2] AN MBE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    MILLER, DL
    HARRIS, JS
    ASBECK, PM
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 579 - 580
  • [3] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHAND, N
    HENDERSON, T
    FISCHER, R
    KOPP, W
    MORKOC, H
    GIACOLETTO, LJ
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 302 - 304
  • [4] ELECTROLUMINESCENCE FROM A HETEROJUNCTION BIPOLAR-TRANSISTOR
    HAYES, JR
    LEHENY, RF
    TEMKIN, H
    GOSSARD, AC
    WIEGMANN, W
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 537 - 539
  • [5] MICROWAVE PNP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    BAYRAKTAROGLU, B
    CAMILLERI, N
    LAMBERT, SA
    [J]. ELECTRONICS LETTERS, 1988, 24 (04) : 228 - 229
  • [6] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DECISION CIRCUIT
    SWARTZ, RG
    LUNARDI, LM
    MALIK, RJ
    ARCHER, VD
    FEUER, MD
    WALKER, JF
    FULLOWAN, TR
    [J]. ELECTRONICS LETTERS, 1989, 25 (02) : 118 - 119
  • [7] ELECTROLUMINESCENCE MEASUREMENT OF BALLISTIC ELECTRON-DISTRIBUTION IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES WITH BASE WIDTH MODULATION
    FUKAI, YK
    FURUTA, T
    ISHIBASHI, T
    [J]. SOLID STATE COMMUNICATIONS, 1994, 92 (09) : 785 - 789
  • [8] REDUCTION OF EMITTER THICKNESS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    TADAYON, S
    TADAYON, B
    TASKER, PJ
    SCHAFF, WJ
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1989, 25 (12) : 802 - 803
  • [9] PHOTOLUMINESCENCE INVESTIGATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS
    TEWS, H
    NEUMANN, R
    ZWICKNAGL, P
    SCHAPER, U
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 341 - 346
  • [10] NONEQUILIBRIUM ELECTRON-TRANSPORT IN AN ALGAAS/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR
    TAIRA, K
    KAWAI, H
    KANEKO, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2767 - 2769
12345