INVESTIGATION OF N-TYPE HGTE IN STRONG ELECTRIC-FIELDS

被引：0
|
作者：
GENKIN, GM
NOZDRIN, YN
OKOMELKOV, AV
SHASTIN, VN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An experimental study was made of the current-voltage characteristic and of the spontaneous radiation emitted from n-type HgTe in electric fields.
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页码：1009 / 1010
页数：2
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