INVESTIGATION OF N-TYPE HGTE IN STRONG ELECTRIC-FIELDS

被引：0

作者：

GENKIN, GM

NOZDRIN, YN

OKOMELKOV, AV

SHASTIN, VN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 09期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An experimental study was made of the current-voltage characteristic and of the spontaneous radiation emitted from n-type HgTe in electric fields.

引用

页码：1009 / 1010

页数：2

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