Novel through-silicon vias for enhanced signal integrity in 3D integrated systems

被引：0

作者：

Fang Runiu ^{[1
]}

Sun Xin ^{[2
]}

Miao Min ^{[3
]}

Jin Yufeng ^{[1
,4
]}

机构：

[1] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

[2] China Elect Technol Grp Corp, Acad Informat Sci Innovat, Beijing 100016, Peoples R China

[3] Beijing Informat Sci & Technol Univ, Inst Informat Microsyst, Beijing 100010, Peoples R China

[4] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 10期

基金：

中国国家自然科学基金;

关键词：

through-silicon-vias; crosstalk; MOS capacitance; Poisson's equation;

D O I：

10.1088/1674-4926/37/10/106002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, a new type of through-silicon via (TSV) for via-first process namely bare TSV, is proposed and analyzed with the aim of mitigating noise coupling problems in 3D integrated systems for advanced technology nodes. The bare TSVs have no insulation layers, and are divided into two types: bare signal TSVs and bare ground TSVs. First, by solving Poisson's equation for cylindrical P-N junctions, the bare signal TSVs are shown to be equivalent to conventional signal TSVs according to the simulation results. Then the bare ground TSV is proved to have improved noise-absorption capability when compared with a conventional ground TSV. Also, the proposed bare TSVs offer more advantages to circuits than other noise isolation methods, because the original circuit design, routing and placement can be retained after the application of the bare TSVs.

引用

页数：6

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