NEW TYPE OF VARACTOR DIODE HAVING STRONGLY NONLINEAR C-V CHARACTERISTICS

被引：3
|
作者：
SHIROTA, S [1 ]
TOGAWA, Y [1 ]
KANEDA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN
来源：
ELECTRONICS LETTERS | 1977年 / 13卷 / 12期
关键词：
D O I：
10.1049/el:19770262
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：360 / 361
页数：2
相关论文
共 50 条
  • [41] Abnormal hysteresis property of SiC oxide C-V characteristics
    Choi, JS
    Lee, WS
    Shin, DH
    Lee, HG
    Kim, YS
    Park, KH
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1021 - 1024
  • [42] The stability of MIS solar cells and evaluation by C-V characteristics
    Gomaa, NG
    RENEWABLE ENERGY, 2001, 23 (3-4) : 369 - 374
  • [43] IV AND C-V CHARACTERISTICS OF FERROELECTRIC LEAD GERMANATE ON SILICON
    KRUPANIDHI, SB
    MANSINGH, A
    SAYER, M
    FERROELECTRICS, 1983, 50 (1-4) : 443 - 448
  • [44] NEW TYPE OF VARACTOR DIODE CONSISTING OF MULTILAYER P-N-JUNCTIONS
    SHIROTA, S
    KANEDA, S
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6012 - 6019
  • [45] Investigation of diode parameters using I-V and C-V characteristics of Al/maleic anhydride (MA)/p-Si structure
    Selcuk, A. B.
    Ocak, S. Bilge
    Kahraman, G.
    Selcuk, A. H.
    BULLETIN OF MATERIALS SCIENCE, 2014, 37 (07) : 1717 - 1724
  • [46] Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes
    Kim, Hogyoung
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2016, 17 (05) : 293 - 296
  • [47] THE INFLUENCE OF THE DX CENTER C-V AND IV CHARACTERISTICS OF SCHOTTKY BARRIERS IN N-TYPE ALGAAS
    GHEZZI, C
    GOMBIA, E
    MOSCA, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10B) : B31 - B33
  • [48] Analysis and simulation of Au/InSb/InP diode C-V characteristic:: modeling and experiments
    Akkal, B
    Benamara, Z
    Gruzza, B
    Bideux, L
    Bouiadjra, NB
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 21 (1-2): : 291 - 296
  • [49] Experimental analysis and 2D-simulation of C-V characteristics in Ag/poly(Si)/ITO/glass Schottky diode
    Amrani, M
    Benseddik, N
    Benamara, Z
    Menezla, R
    Chellali, M
    Tizi, S
    Mohammed-Brahim, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 121 (1-2): : 71 - 76
  • [50] Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes
    Yuksel, O. F.
    Selcuk, A. B.
    Ocak, S. B.
    PHYSICA B-CONDENSED MATTER, 2008, 403 (17) : 2690 - 2697
12345