NEW TYPE OF VARACTOR DIODE HAVING STRONGLY NONLINEAR C-V CHARACTERISTICS

被引:3
|
作者
SHIROTA, S [1 ]
TOGAWA, Y [1 ]
KANEDA, S [1 ]
机构
[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN
关键词
D O I
10.1049/el:19770262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:360 / 361
页数:2
相关论文
共 50 条
  • [31] A model for high frequency C-V characteristics of ferroelectric capacitors
    Ogata, N
    Ishiwara, H
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (06) : 777 - 784
  • [32] C-V AND IV CHARACTERISTICS OF QUANTUM-WELL VARACTORS
    SUN, JP
    MAINS, RK
    CHEN, WL
    EAST, JR
    HADDAD, GI
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2340 - 2346
  • [33] Experimental Investigation of C-V Characteristics of Si Tunnel FETs
    Liu, Chang
    Glass, Stefan
    Gia Vinh Luong
    Narimani, Keyvan
    Han, Qinghua
    Tiedemann, Andreas T.
    Fox, Alfred
    Yu, Wenjie
    Wang, Xi
    Mantl, Siegfried
    Zhao, Qing-Tai
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (06) : 818 - 821
  • [34] EFFECT OF DIFFERENT OXIDATION PROCESSES ON MOS C-V CHARACTERISTICS
    MAJHI, J
    RAO, DK
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1984, 22 (04) : 218 - 221
  • [35] NEW TECHNIQUE FOR AUTOMATIC C-V AND G-V MEASUREMENTS
    FREEMAN, M
    NOTTENBURG, R
    DUBOW, J
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (03): : 328 - 334
  • [36] C-V CHARACTERISTICS OF SIC METAL-OXIDE-SEMICONDUCTOR DIODE WITH A THERMALLY GROWN SIO2 LAYER
    SUZUKI, A
    MAMENO, K
    FURUI, N
    MATSUNAMI, H
    APPLIED PHYSICS LETTERS, 1981, 39 (01) : 89 - 90
  • [37] C-V characteristics of metal-polysilane-silicon structures
    Peng, ZJ
    Si, WJ
    Xie, MN
    Fu, HJ
    Miao, HZ
    ACTA PHYSICO-CHIMICA SINICA, 2003, 19 (02) : 97 - 99
  • [38] Extraction of Trap Densities in TFTs using C-V Characteristics
    Kimura, Mutsumi
    Matsuda, Tokiyoshi
    THIN FILM TRANSISTORS 12 (TFT 12), 2014, 64 (10): : 45 - 50
  • [39] C-V CHARACTERISTICS OF AL/SION/GAAS MIS SYSTEMS
    WU, CY
    HUANG, RS
    LIN, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) : 1200 - 1204
  • [40] EFFECTS OF PLASMA ASHING ON C-V CHARACTERISTICS OF A MOS CAPACITOR
    WESTON, DF
    KELLER, JV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C284 - C284