PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE

被引：236
|
作者：
DAT, R
LEE, JK
AUCIELLO, O
KINGON, AI
机构：
[1] MICROELECTR CTR N CAROLINA,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709
[2] KOREA ADV INST SCI & TECHNOL,DIV CERAM,SEOUL,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期
关键词：
D O I：
10.1063/1.115173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on platinized silicon substrates. Top electrodes were produced by de magnetron sputter deposition to fabricate capacitors for electrical tests. The polarization electric field hysteresis loops showed saturation in the 2-4 V range with a coercive field of 25 kV/cm. The capacitors showed practically no polarization fatigue up to 10(11) switching cycles. The resistivity of the SrBi2Ta2O9 for a coercive field of 100 kV/cm was approximately 2X10(11) Omega cm. Retention and imprint characteristics of these capacitors showed no degradation as a function of cumulative waiting times. (C) 1995 American Institute of Physics.
引用
收藏
页码：572 / 574
页数：3
相关论文
共 50 条
  • [1] Characterization of polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors in ferroelectric random access memory
    Kang, YM
    Chung, CH
    Oh, SH
    Yang, BY
    Lee, SS
    Hong, SK
    Kang, NS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 694 - 697
  • [2] Characterization of polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors in ferroelectric random access memory
    Kang, Young Min
    Chung, Choong Heui
    Oh, Sang Hyun
    Yang, Beelyong
    Lee, Seaung Suk
    Hong, Suk Kyoung
    Kang, Nam Soo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 694 - 697
  • [3] Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique
    Lee, JK
    Jung, HJ
    Auciello, O
    Kingon, AI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 900 - 904
  • [4] Polarization and leakage degradation of Pt/SrBi2Ta2O9/Pt capacitors and their recovery
    Tamai, S
    Maeda, Y
    Kobayashi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9B): : 6943 - 6946
  • [5] Imprint related fatigue behavior of Pt/SrBi2Ta2O9/Pt capacitors
    Xie, D
    Zhang, ZG
    Ren, TL
    Wei, CG
    Liu, LT
    INTEGRATED FERROELECTRICS, 2005, 73 : 99 - 106
  • [6] Pulsed laser ablation synthesis and characterization of ferroelectric SrBi2Ta2O9 thin films
    Bu, SD
    Park, BH
    Kang, BS
    Kang, SH
    Noh, TW
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1197 - S1201
  • [7] Top electrode postanneal effect on ferroelectric properties of Pt/SrBi2Ta2O9/Pt capacitors
    Wu, D
    Li, AD
    Ling, HQ
    Yu, T
    Liu, ZG
    Ming, NB
    FERROELECTRICS, 2001, 259 (1-4) : 339 - 344
  • [8] Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
    Thomas, D
    Kingon, AI
    Auciello, O
    Waser, R
    Schumacher, M
    INTEGRATED FERROELECTRICS, 1997, 14 (1-4) : 51 - 57
  • [9] Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories
    North Carolina State Univ, Raleigh, United States
    Integrated Ferroelectrics, 1997, 14 (1 -4 pt 1): : 51 - 57
  • [10] Pulsed laser ablation synthesis and ferroelectric properties of SrBi2Ta2O9 thin films
    Yang, PX
    Zheng, LR
    Lin, CL
    Wu, WB
    Okuyama, M
    INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 79 - 86
12345