Polarization and leakage degradation of Pt/SrBi2Ta2O9/Pt capacitors and their recovery

被引:2
|
作者
Tamai, S [1 ]
Maeda, Y [1 ]
Kobayashi, H [1 ]
机构
[1] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan
关键词
SrBi2Ta2O9; water vapor-induced degradation; polarization switching; recovery; leakage current; electrolysis; Pt electrode;
D O I
10.1143/JJAP.44.6943
中图分类号
O59 [应用物理学];
学科分类号
摘要
Water (H2O) vapor-induced degradation of SrBi2Ta2O9 (SBT) capacitors has been investigated. SBT capacitors with no passivation layer were maintained in the atmosphere at 20 degrees C for one-half year after their preparation. The capacitors showed pronounced degradation of polarization and increased leakage currents. A recovery process based on H2O vaporization from the SBT films was examined. We succeeded in completely recovering the polarization, fatigue and leakage current characteristics using thermal annealing at 300 degrees C in a vacuum.
引用
收藏
页码:6943 / 6946
页数:4
相关论文
共 50 条
  • [1] Polarization and leakage degradation of Pt/SrBi2Ta 2O9/Pt capacitors and their recovery
    Tamai, Shin-Ichi
    Maeda, Yoshihito
    Kobayashi, Hiroyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (9 B): : 6943 - 6946
  • [2] Imprint related fatigue behavior of Pt/SrBi2Ta2O9/Pt capacitors
    Xie, D
    Zhang, ZG
    Ren, TL
    Wei, CG
    Liu, LT
    INTEGRATED FERROELECTRICS, 2005, 73 : 99 - 106
  • [3] Characteristics of Pt/Ti and Pt/TiOx electrodes for SrBi2Ta2O9 (SBT) capacitors
    Kweon, SY
    Yeom, SJ
    Kim, NK
    Sun, HJ
    Yu, YS
    Lee, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S110 - S114
  • [4] The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures after post-annealing and their origin
    Choi, HS
    Shin, DS
    Lee, HY
    Kim, YT
    Park, YK
    Choi, IH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1210 - S1213
  • [5] Top electrode postanneal effect on ferroelectric properties of Pt/SrBi2Ta2O9/Pt capacitors
    Wu, D
    Li, AD
    Ling, HQ
    Yu, T
    Liu, ZG
    Ming, NB
    FERROELECTRICS, 2001, 259 (1-4) : 339 - 344
  • [6] Characterization of polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors in ferroelectric random access memory
    Kang, YM
    Chung, CH
    Oh, SH
    Yang, BY
    Lee, SS
    Hong, SK
    Kang, NS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 694 - 697
  • [7] Characterization of polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors in ferroelectric random access memory
    Kang, Young Min
    Chung, Choong Heui
    Oh, Sang Hyun
    Yang, Beelyong
    Lee, Seaung Suk
    Hong, Suk Kyoung
    Kang, Nam Soo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 694 - 697
  • [8] PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE
    DAT, R
    LEE, JK
    AUCIELLO, O
    KINGON, AI
    APPLIED PHYSICS LETTERS, 1995, 67 (04) : 572 - 574
  • [9] Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique
    Lee, JK
    Jung, HJ
    Auciello, O
    Kingon, AI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 900 - 904