Polarization and leakage degradation of Pt/SrBi2Ta2O9/Pt capacitors and their recovery

被引:2
|
作者
Tamai, S [1 ]
Maeda, Y [1 ]
Kobayashi, H [1 ]
机构
[1] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan
关键词
SrBi2Ta2O9; water vapor-induced degradation; polarization switching; recovery; leakage current; electrolysis; Pt electrode;
D O I
10.1143/JJAP.44.6943
中图分类号
O59 [应用物理学];
学科分类号
摘要
Water (H2O) vapor-induced degradation of SrBi2Ta2O9 (SBT) capacitors has been investigated. SBT capacitors with no passivation layer were maintained in the atmosphere at 20 degrees C for one-half year after their preparation. The capacitors showed pronounced degradation of polarization and increased leakage currents. A recovery process based on H2O vaporization from the SBT films was examined. We succeeded in completely recovering the polarization, fatigue and leakage current characteristics using thermal annealing at 300 degrees C in a vacuum.
引用
收藏
页码:6943 / 6946
页数:4
相关论文
共 50 条
  • [21] Degradation of ferroelectric SrBi2Ta2O9 materials under reducing conditions and their reaction with Pt electrodes
    Shimakawa, Y
    Kubo, Y
    APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2839 - 2841
  • [22] A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films
    Watts, BE
    Leccabue, F
    Guerri, S
    Severi, M
    Fanciulli, M
    Ferrari, S
    Tallarida, G
    Morandi, C
    THIN SOLID FILMS, 2002, 406 (1-2) : 23 - 29
  • [23] Degradation and recovery of polarization under synchrotron x rays in SrBi2Ta2O9 ferroelectric capacitors -: art. no. 044106
    Menou, N
    Castagnos, AM
    Muller, C
    Goguenheim, D
    Goux, L
    Wouters, DJ
    Hodeau, JL
    Dooryhee, E
    Barrett, R
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [24] Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing
    Tofuku, A
    Yoshie, T
    Osaka, T
    Koiwa, I
    Kobayashi, H
    Sawada, Y
    Hashimoto, A
    INTEGRATED FERROELECTRICS, 1999, 25 (1-4) : 585 - 604
  • [25] SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient
    W. Hartner
    P. Bosk
    G. Schindler
    H. Bachhofer
    M. Mört
    H. Wendt
    T. Mikolajick
    C. Dehm
    H. Schroeder
    R. Waser
    Applied Physics A, 2003, 77 : 571 - 579
  • [26] MOCVD of SrBi2Ta2O9 for integrated ferroelectric capacitors
    Hendrix, BC
    Hintermaier, F
    Desrochers, DA
    Roeder, JF
    Bhandari, G
    Chappuis, M
    Baum, TH
    Van Buskirk, PC
    Dehm, C
    Fritsch, E
    Nagel, N
    Honlein, W
    Mazure, C
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 225 - 230
  • [27] SrBi2Ta2O9 ferroelectric thin film capacitors:: degradation in a hydrogen ambient
    Hartner, W
    Bosk, P
    Schindler, G
    Bachhofer, H
    Mört, M
    Wendt, H
    Mikolajick, T
    Dehm, C
    Schroeder, H
    Waser, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 77 (3-4): : 571 - 579
  • [28] Degradation of ferroelectric properties in integrated Pt/SrBi2Ta2O9/Pt capacitor by impurity diffusion from interlevel dielectric layer
    Oh, SH
    Hong, SK
    Kim, JG
    Seong, JY
    Park, YJ
    Lee, DW
    APPLIED PHYSICS LETTERS, 2002, 81 (22) : 4230 - 4232
  • [29] Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors
    Li, AD
    Yu, T
    Ling, HQ
    Wu, D
    Liu, ZG
    Ming, NB
    JOURNAL OF MATERIALS RESEARCH, 2001, 16 (12) : 3526 - 3535
  • [30] Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors
    Ai-Dong Li
    Tao Yu
    Hui-Qin Ling
    Di Wu
    Zhi-Guo Liu
    Nai-Ben Ming
    Journal of Materials Research, 2001, 16 : 3526 - 3535