PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE

被引:236
|
作者
DAT, R
LEE, JK
AUCIELLO, O
KINGON, AI
机构
[1] MICROELECTR CTR N CAROLINA,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709
[2] KOREA ADV INST SCI & TECHNOL,DIV CERAM,SEOUL,SOUTH KOREA
关键词
D O I
10.1063/1.115173
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on platinized silicon substrates. Top electrodes were produced by de magnetron sputter deposition to fabricate capacitors for electrical tests. The polarization electric field hysteresis loops showed saturation in the 2-4 V range with a coercive field of 25 kV/cm. The capacitors showed practically no polarization fatigue up to 10(11) switching cycles. The resistivity of the SrBi2Ta2O9 for a coercive field of 100 kV/cm was approximately 2X10(11) Omega cm. Retention and imprint characteristics of these capacitors showed no degradation as a function of cumulative waiting times. (C) 1995 American Institute of Physics.
引用
收藏
页码:572 / 574
页数:3
相关论文
共 50 条
  • [31] Characteristics of nanoparticles formed during pulsed laser ablation of SrBi2Ta2O9
    Seol, Kwang Soo
    Takeuchi, Kazuo
    Miyagawa, Takeshi
    Ohki, Yoshimichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (09): : 5654 - 5658
  • [32] Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9
    Cambridge Univ, Cambridge, United Kingdom
    Appl Phys Lett, 12 (1704-1706):
  • [33] Characteristics of nanoparticles formed during pulsed laser ablation of SrBi2Ta2O9
    Seol, KS
    Takeuchi, K
    Miyagawa, T
    Ohki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (09): : 5654 - 5658
  • [34] Electronic structure of the layered ferroelectric perovskite SrBi2Ta2O9
    Robertson, J
    Chen, CW
    Warren, WL
    FERROELECTRIC THIN FILMS V, 1996, 433 : 279 - 284
  • [35] Sintering behavior of SrBi2Ta2O9 layered ferroelectric ceramics
    Chen, YC
    Lu, CH
    DIELECTRIC CERAMIC MATERIALS, 1999, 100 : 217 - 225
  • [36] Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9
    Robertson, J
    Chen, CW
    Warren, WL
    Gutleben, CD
    APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1704 - 1706
  • [37] Infrared activity in the Aurivillius layered ferroelectric SrBi2Ta2O9
    Moret, MP
    Zallen, R
    Newnham, RE
    Joshi, PC
    Desu, SB
    PHYSICAL REVIEW B, 1998, 57 (10): : 5715 - 5723
  • [38] Ferroelectric phase transition in layered perovskite SrBi2Ta2O9
    Murata, W
    Onodera, A
    Yoshio, K
    Yamashita, H
    Takama, T
    FERROELECTRICS, 2002, 270 : 1489 - 1494
  • [40] Defect chemistry of SrBi2Ta2O9 and ferroelectric fatigue endurance
    Palanduz, AC
    Smyth, DM
    JOURNAL OF ELECTROCERAMICS, 2000, 5 (01) : 21 - 30