LATERAL UNIFORMITY IN SN- OR SI-DOPED N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：3
|
作者：
HIYAMIZU, S
FUJII, T
NANBU, K
HASHIMOTO, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 01期
关键词：
D O I：
10.1016/0022-0248(81)90021-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：149 / 152
页数：4
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