GROWTH BY MOLECULAR-BEAM EPITAXY OF THICK-FILMS OF INXGA1-XAS (X-APPROXIMATELY-0.53) ON SI(100) SUBSTRATES

Epitaxial layers of InxGa1-xAs (x = 0.53 +/- 0.04) have been grown on (100)Si substrates misoriented by 3-degrees towards the [011] direction. Films of 3-mu-m thickness were grown in the temperature range T(g) = 200-550-degrees-C and their morphological, structural and electrical properties compared. It was found that three distinct growth temperature windows could be identified, the boundaries between the windows being characterized by abrupt changes in all of the properties of the layers. In particular the best quality material, in all respects, was produced in a very narrow growth temperature (T(g)) region (265 less-than-or-equal-to T(g) less-than-or-equal-to 300-degrees-C).