GROWTH OF ZNSE ON GE(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

YAMAGUCHI, E ^{[1
]}

TAKAYASU, I ^{[1
]}

MINATO, T ^{[1
]}

KAWASHIMA, M ^{[1
]}

机构：

[1] SUMITOMO MET MIN CO LTD,ELECTR MAT LAB,OHME,TOKYO 198,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：885 / 889

页数：5

共 50 条

[1] GROWTH OF ZNSE FILMS ON GAAS (100) SUBSTRATES BY CONVENTIONAL AND PULSED MOLECULAR-BEAM EPITAXY
LILJA, J
KESKINEN, J
ASONEN, H
PESSA, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 522 - 524
[2] MOLECULAR-BEAM EPITAXY GROWTH OF GE ON (100)SI
BARIBEAU, JM
HOUGHTON, DC
JACKMAN, TE
MCCAFFREY, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1158 - 1162
[3] Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxy
Sakai, S
Cheng, TS
Foxon, TC
Sugahara, T
Naoi, Y
Naoi, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 471 - 475
[4] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100)
FARRELL, HH
TAMARGO, MC
DEMIGUEL, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 767 - 768
[5] HETEROEPITAXIAL GROWTH OF GE FILMS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
ZHOU, GL
CHEN, KM
JIANG, WD
SHENG, C
ZHANG, XJ
WANG, X
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2179 - 2181
[6] MOLECULAR-BEAM EPITAXY OF INAS ON (100)INP SUBSTRATES
DVORYANKINA, GG
DVORYANKIN, VF
PETROV, AG
KUDRYASHOV, AA
KHUSID, LB
[J]. INORGANIC MATERIALS, 1991, 27 (12): : 2147 - 2150
[7] ATOMIC LAYER EPITAXY OF ZNSE ON GAAS(100) BY METALORGANIC MOLECULAR-BEAM EPITAXY
KIMURA, R
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 283 - 288
[8] SUPPRESSION OF ANTIPHASE DOMAINS IN THE GROWTH OF GAAS ON GE(100) BY MOLECULAR-BEAM EPITAXY
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 214 - 220
[9] Growth and photoluminescence characterization of ZnSe layers grown on (100) Ge by molecular beam epitaxy
Park, R. M.
Mar, H. A.
[J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) : 543 - 546
[10] GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
AIRAKSINEN, VM
KAITILA, J
NIEMI, H
LAHTINEN, J
SAARILAHTI, J
[J]. PHYSICA SCRIPTA, 1994, 54 : 205 - 207

← 1 2 3 4 5 →