GROWTH BY MOLECULAR-BEAM EPITAXY OF THICK-FILMS OF INXGA1-XAS (X-APPROXIMATELY-0.53) ON SI(100) SUBSTRATES

被引：1

作者：

WESTWOOD, DI

WOOLF, DA

CLARK, SA

机构：

[1] Department of Physics, University of Wales College of Cardiff, Cardiff

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 114卷 / 03期

关键词：

D O I：

10.1016/0022-0248(91)90051-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of InxGa1-xAs (x = 0.53 +/- 0.04) have been grown on (100)Si substrates misoriented by 3-degrees towards the [011] direction. Films of 3-mu-m thickness were grown in the temperature range T(g) = 200-550-degrees-C and their morphological, structural and electrical properties compared. It was found that three distinct growth temperature windows could be identified, the boundaries between the windows being characterized by abrupt changes in all of the properties of the layers. In particular the best quality material, in all respects, was produced in a very narrow growth temperature (T(g)) region (265 less-than-or-equal-to T(g) less-than-or-equal-to 300-degrees-C).

引用

页码：346 / 350

页数：5

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