METAL-SEMICONDUCTOR INTERFACES - MAGNETIC AND ELECTRONIC-PROPERTIES AND SCHOTTKY-BARRIER IN FEN/(ZNSE)M (001) SUPERLATTICES

被引:17
|
作者
CONTINENZA, A [1 ]
MASSIDDA, S [1 ]
FREEMAN, AJ [1 ]
机构
[1] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60208
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 05期
关键词
D O I
10.1103/PhysRevB.42.2904
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of a systematic local-density study of the electronic and magnetic properties of Fen/(ZnSe)m [namely, Fe1/(ZnSe)1, Fe3/(ZnSe)1, and Fe3/(ZnSe)2] superlattices are presented. The effects of varying Fe and semiconductor layer thicknesses on the magnetic and electronic properties of the superlattice are analyzed. In particular, we found that (i) the enhanced Fe magnetism that characterizes the Fe-monolayer superlattice is suppressed as the Fe thickness is increased; (ii) some charge is transferred from the Fe layers into the ZnSe region; (iii) the interface effects are rapidly screened in the inner Fe layers; and (iv) a significant role on the Fe magnetism is played by the geometrical site coordination. Finally, for the thickest superlattice, the Schottky-barrier height is estimated. © 1990 The American Physical Society.
引用
收藏
页码:2904 / 2913
页数:10
相关论文
共 50 条
  • [41] Electronic properties of ideal and interface-modified metal-semiconductor interfaces
    Monch, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2985 - 2993
  • [42] DETERMINATION OF QUASI-FERMI LEVEL AT THE METAL-SEMICONDUCTOR INTERFACE IN A FORWARD-BIASED SCHOTTKY-BARRIER DIODE
    SIMEONOV, SS
    IVANOVITCH, MD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : 79 - 84
  • [43] Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials
    Hasegawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B): : 1098 - 1102
  • [44] ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES
    BRUCKER, CF
    BRILLSON, LJ
    THIN SOLID FILMS, 1982, 93 (1-2) : 67 - 74
  • [45] Metal-semiconductor transition and magnetic properties of epitaxially grown MnAs/GaAs superlattices
    Song, J. H.
    Cui, Y.
    Lee, J. J.
    Cho, S. L.
    Ketterson, J. B.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [46] Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials
    Hasegawa, Hideki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1098 - 1102
  • [47] ELECTRONIC-PROPERTIES OF (ZNSE)(M)(CD(1)-X)ZN(X)SE)(N) SUPERLATTICES
    REN, SF
    GU, ZQ
    CHANG, YC
    PHYSICAL REVIEW B, 1994, 49 (11): : 7569 - 7572
  • [48] ELECTRONIC-PROPERTIES OF NANOMETER-SIZE METAL-SEMICONDUCTOR POINT CONTACTS STUDIED BY STM
    HASEGAWA, Y
    LYO, IW
    AVOURIS, P
    APPLIED SURFACE SCIENCE, 1994, 76 (1-4) : 347 - 352
  • [49] NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES
    BRILLSON, LJ
    VITURRO, RE
    CHANG, S
    SHAW, JL
    MAILHIOT, C
    ZANONI, R
    HWU, Y
    MARGARITONDO, G
    KIRCHNER, P
    WOODALL, JM
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 103 - 115
  • [50] EFFECT OF THE METAL-SEMICONDUCTOR INTERFACE ON CARRIER COLLECTION IN A-SI-H SCHOTTKY-BARRIER SOLAR-CELL STRUCTURES
    NAG, S
    NICQUE, JL
    MALONE, C
    ARCH, J
    HELLER, D
    FONASH, S
    WRONSKI, C
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1992, 28 (03) : 285 - 292