Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials

被引：0

作者：

Hasegawa, Hideki ^{[1
]}

机构：

[1] Res. Ctr. for Interface Quant. E., Grad. Sch. Electronics and Inf. Eng., Hokkaido University, Sapporo 060-8628, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期

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摘要：

引用

页码：1098 / 1102

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[1] Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials
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