Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials

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作者：
Hasegawa, Hideki [1 ]
机构：
[1] Res. Ctr. for Interface Quant. E., Grad. Sch. Electronics and Inf. Eng., Hokkaido University, Sapporo 060-8628, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期
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页码：1098 / 1102
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