KA-BAND MONOLITHIC GAAS-MESFET AMPLIFIER DESIGN

被引：0
|
作者：
ROLLMAN, JA
WAHID, PF
机构：
[1] Martin Marietta Corporation and Alpha Industries, Inc, Martin Marietta Electronic Systems, Orlando, Florida
[2] University of Central Florida, Orlando, Florida
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 08期
关键词：
1 dB compressed output power; Amplifier; bias stabilization network; gain;
D O I：
10.1002/mop.4650030802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three designs, a single‐stage, a parallel‐stage, and a two‐stage amplifier, for medium power monolithic GaAs MESFET amplifiers at Ka‐band are presented. The results obtained are consistent with other performances reported at these frequencies. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company
引用
收藏
页码：273 / 276
页数：4
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