GaAs Balanced Amplifier for Ka-Band Space Communications System

被引：0

作者：

Pantoli, L. ^{[1
]}

Barigelli, A. ^{[2
]}

Leuzzi, G. ^{[1
]}

Vitulli, F. ^{[2
]}

Suriani, A. ^{[2
]}

机构：

[1] Univ Aquila, Dept Ind & Informat Engn & Econ, Laquila, Italy

[2] Thales Alenia Space, Rome, Italy

来源：

2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年

关键词：

Balanced amplifier; dynamic range; GaAs technology; Ka-band; Space technology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with the development of a state-of-the- art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.

引用

页码：1281 / 1284

页数：4

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