Fully monolithic 4 Watt high efficiency Ka-band power amplifier

被引：0
|
作者：
Komiak, JJ [1 ]
Kong, W [1 ]
Chao, PC [1 ]
Nichols, K [1 ]
Nichols, K [1 ]
机构：
[1] A Lockheed Martin Co, Nashua, NH 03061 USA
来源：
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and performance of a power amplifier that has established a new benchmark for Ka-Band power is reported. The amplifier achieved > 4 Watts at 25 to 31 % PAE with 14 dB of power gain from 29 to 31 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results [1,2]. The amplifier is implemented in an improved fully selective 0.15 um power PHEMT process.
引用
收藏
页码：947 / 950
页数：4
相关论文
共 50 条
  • [1] 2 and 4 watt Ka-band GaAsPHEMT power amplifier MMICs
    Colomb, FY
    Platzker, A
    [J]. 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 843 - 846
  • [2] Monolithic 6W Ka-band high power amplifier
    Emrick, R
    [J]. 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 527 - 529
  • [3] 4-Watt Ka-band AlGaN/GaN power amplifier MMIC
    Darwish, A. M.
    Boutros, K.
    Luo, B.
    Huebschman, B.
    Viveiros, E.
    Hung, H. A.
    [J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 730 - 733
  • [4] A high power broadband monolithic power amplifier for Ka-band ground terminals
    Siddiqui, MK
    Sharma, AK
    Callejo, LG
    Lai, R
    [J]. 1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 951 - 954
  • [5] A 20-Watt Ka-Band GaN High Power Amplifier MMIC
    Ng, C. Y.
    Takagi, K.
    Senju, T.
    Matsushita, K.
    Sakurai, H.
    Onodera, K.
    Nakanishi, S.
    Kuroda, K.
    Soejima, T.
    [J]. 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 404 - 407
  • [6] A 20-Watt Ka-Band GaN High Power Amplifier MMIC
    Ng, C. Y.
    Takagi, K.
    Senju, T.
    Matsushita, K.
    Sakurai, H.
    Onodera, K.
    Nakanishi, S.
    Kuroda, K.
    Soejima, T.
    [J]. 2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1348 - 1351
  • [7] A High Power Amplifier At Ka-band
    Yang Jiansong
    Guo Dechun
    [J]. PROCEEDINGS OF 2014 3RD ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP 2014), 2014, : 1380 - 1383
  • [8] A 4 Watt Ka-band Quasi-Optical amplifier
    Hubert, J
    Mirth, L
    Ortiz, S
    Mortazawi, A
    [J]. 1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 551 - 554
  • [9] A Ka-Band Watt-Level High-Efficiency Integrated Doherty Power Amplifier in GaAs Technology
    Xie, Heng
    Cheng, Yu Jian
    Fan, Yong
    [J]. 2021 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2021, : 287 - 289
  • [10] High Efficiency Ka-Band Gallium Nitride Power Amplifier MMICs
    Campbell, Charles F.
    Liu, Yueying
    Kao, Ming-Yih
    Nayak, Sabyasachi
    [J]. 2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013), 2013,
12345